Evaluation of HgCdTe using laser beam induced current

Details Evaluation of HgCdTe using laser beam induced current Evaluation of HgCdTe using laser beam induced current

Sep 1995

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995spie.2554...89a&link_type=abstract

Proc. SPIE Vol. 2554, p. 89-96, Growth and Characterization of Materials for Infrared Detectors II, Randolph E. Longshore; Jan W

Physics

Scientific paper

We have developed a nondestructive evaluation method for HgCdTe. We focused on laser beam induced current (LBIC) which features a high specific resolution and nondestructive evaluation. The LBIC technique shows the electrically active regions in HgCdTe wafer as an image. We have considered the measurement temperature versus the LBIC signal. The LBIC technique at room temperature (300 K) can be used to evaluate non-uniformities in carrier concentrations in HgCdTe more sensitively. Using etch pit studies and secondary ion mass spectroscopy (SIMS), we have identified that non-uniformities of carrier concentration in the HgCdTe wafer arise from metal impurities around dislocation clusters. This nondestructive technique is useful for screening HgCdTe wafers before fabricating devices.

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