Evaluation of GaAs FETs for cryogenic readout

Details Evaluation of GaAs FETs for cryogenic readout Evaluation of GaAs FETs for cryogenic readout

Jul 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1684..110k&link_type=abstract

In: Infrared readout electronics; Proceedings of the Meeting, Orlando, FL, Apr. 21, 22, 1992 (A93-53076 23-33), p. 110-130.

Physics

1

Cryogenic Equipment, Field Effect Transistors, Gallium Arsenides, Readout, Background Noise, Requirements, Resistance, Thermal Cycling Tests

Scientific paper

Low-frequency, low-noise, low-power cryogenic electronics to read out photodetectors is being investigated for the star-tracking telescope of the Gravity Probe B spacecraft. We report our initial findings from evaluating more than 20 types of GaAs FETs, both commercial and non-commercial, for this application. Most exhibit useable dc characteristics at cryogenic temperatures, although gate leakage and hysteretic effects (presumably due to charge trapping) could be troublesome. Low-frequency noise (based primarily on grounded-gate measurements) at 4 K is '1/f-like' and for the quietest GaAs FETs appears to be at least as low as the lowest noise values reported for Si MOSFETs at 4 K. Further investigation is needed in several areas.

Affiliated with

Also associated with

No associations

Rating

Evaluation of GaAs FETs for cryogenic readout does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Evaluation of GaAs FETs for cryogenic readout, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Evaluation of GaAs FETs for cryogenic readout will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1532618