Epitaxial lead-chalcogenides on fluoride/Si for IR-sensor array applications

Details Epitaxial lead-chalcogenides on fluoride/Si for IR-sensor array applications Epitaxial lead-chalcogenides on fluoride/Si for IR-sensor array applications

Dec 1993

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1993spie.2021..125z&link_type=abstract

Proc. SPIE Vol. 2021, p. 125-136, Growth and Characterization of Materials for Infrared Detectors, Randolph E. Longshore; Jan W.

Physics

Scientific paper

MBE growth and IR device fabrication with epitaxial IV-VI layers on Si-substrates is reviewed and some new results are included. Epitaxy is achieved using a stacked BaF(subscript 2)/CaF(subscript 2) or CaF(subscript 2) buffer layer. While photolithographic delineation techniques are somewhat difficult with BaF(subscript 2) (which is soluble in water), reliable wet-etching techniques are easy with the CaF(subscript 2) buffer. Photovoltaic IV-VI sensors on Si(111) substrates are fabricated with cut-off wavelengths covering the whole atmospheric 3 - 5 and 8 - 14 micrometers window. They offer the possibility for low cost IR focal plane arrays with sensitivities similar to MCT, but with much less demanding material processing steps.

Affiliated with

Also associated with

No associations

Rating

Epitaxial lead-chalcogenides on fluoride/Si for IR-sensor array applications does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Epitaxial lead-chalcogenides on fluoride/Si for IR-sensor array applications, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Epitaxial lead-chalcogenides on fluoride/Si for IR-sensor array applications will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1302773