Epitaxial Growth of Si1-yCy Film by Low Temperature Chemical Vapor Deposition

Details Epitaxial Growth of Si1-yCy Film by Low Temperature Chemical Vapor Deposition Epitaxial Growth of Si1-yCy Film by Low Temperature Chemical Vapor Deposition

Nov 2000

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2000jajap..39.1078y&link_type=abstract

Japanese Journal of Applied Physics, Volume 39, Issue 11A, pp. 1078 (2000).

Physics

3

Scientific paper

Epitaxial Si1-yCy films were grown on Si(100) by two methods, mercury sensitized photochemical vapor deposition and plasma-enhanced chemical vapor deposition, at substrate temperatures of around 200^\circC using SiH4, H2 and C2H2. The vibration mode at 607 cm-1, which indicated the presence of the C atoms located at the Si substitutional sites, was observed in both Fourier transform infrared absorption and Raman scattering spectroscopy of the samples annealed at 600 to 700^\circC@. The C composition was controlled by varying the C2H2/SiH4 ratio. The maximum substitutional C compositions of 2.3 at% and 2.7 at% were successfully obtained by mercury sensitized photochemical vapor deposition and plasma-enhanced chemical vapor deposition, respectively.

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