Physics
Scientific paper
Nov 2009
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2009njph...11k3054k&link_type=abstract
New Journal of Physics, Volume 11, Issue 11, pp. 113054 (2009).
Physics
7
Scientific paper
To achieve maximum performance in microscale magnetic shape memory actuation devices epitaxial films several hundred nanometers thick are needed. Epitaxial films were grown on hot MgO substrates (500 °C and above) by e-beam evaporation. Structural properties and stress relaxation mechanisms were investigated by high-resolution transmission electron microscopy, in situ substrate curvature measurements and classical molecular dynamics (MD) simulations. The high misfit stress incorporated during Vollmer-Weber growth at the beginning was relaxed by partial or perfect dislocations depending on the substrate temperature. This relaxation allowed the avoidance of a stress-induced breakdown of epitaxy and no thickness limit for epitaxy was found. For substrate temperatures of 690 °C or above, the films grew in the fcc austenite phase. Below this temperature, iron precipitates were formed. MD simulations showed how these precipitates influence the movements of partial dislocations, and can thereby explain the higher stress level observed in the experiments in the initial stage of growth for these films.
Edler Tobias
Kock I.
Kühnemund L.
Mayr S. G.
Seibt Michael
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