Enhanced Light Emission from Erbium Doped Silicon Nitride in Plasmonic Metal-Insulator-Metal Structures

Details Enhanced Light Emission from Erbium Doped Silicon Nitride in Plasmonic Metal-Insulator-Metal Structures Enhanced Light Emission from Erbium Doped Silicon Nitride in Plasmonic Metal-Insulator-Metal Structures

2009-08-26

arxiv.org/abs/0908.3901v2

Physics

Optics

9 pages, 6 figures updated because pdf was still non-functional

Scientific paper

Plasmonic gratings and nano-particle arrays in a metal-insulator-metal structures are fabricated on an erbium doped silicon nitride layer. This material system enables simple fabrication of the structure, since the active nitride layer can be directly grown on metal. Enhancement of collected emission of up to 12 is observed on resonance, while broad off-resonant enhancement is also present. The output polarization behavior of the gratings and nano-particle arrays is investigated and matched to plasmonic resonances, and the behavior of coupled modes as a function of inter-particle distance is also discussed.

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