Electronic transport in bilayer graphene

Details Electronic transport in bilayer graphene Electronic transport in bilayer graphene

Sep 2009

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2009njph...11i5010k&link_type=abstract

New Journal of Physics, Volume 11, Issue 9, pp. 095010 (2009).

Physics

14

Scientific paper

We present theoretical studies on the transport properties and localization effects of bilayer graphene. We calculate the conductivity by using the effective mass model with the self-consistent Born approximation, in the presence and absence of an energy gap opened by the interlayer asymmetry. We find that, in the absence of the gap, the minimum conductivity approaches the universal value by increasing the disorder potential, and the value is robust in the strong disorder regime where mixing with high-energy states is considerable. The gap-opening suppresses the conductivity over a wide energy range, even in the region away from the gap.We also study the localization effects in the vicinity of zero energy in bilayer graphene. We find that the states are all localized in the absence of the gap, while the gap-opening causes a phase transition analogous to the quantum Hall transition, which is accompanied by electron delocalization.

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