Electronic sputtering of low temperature molecular solids

Details Electronic sputtering of low temperature molecular solids Electronic sputtering of low temperature molecular solids

Feb 1984

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1984nimpb...1..307b&link_type=abstract

Nuclear Instruments and Methods in Physics Research Section B, Volume 1, Issue 2-3, p. 307-314.

Physics

30

Scientific paper

Electronically stimulated sputtering of insulating molecular gas solids is a remarkably efficient process at excitation densities accessible by MeV light ions and keV electrons. This paper concentrates on the cases of CO and H2O (D2O). The approximately quadratic dependence of sputtering yield on the excitation density along individual particle tracks observed earlier for incident MeV ions has also been found for incident keV electrons in the case of CO. Coupled with time-of-flight energy spectra of ejected D2O from solid D2O, this behavior leads to a picture of rapid electronic relaxation with molecular repulsion involving pairs of molecular ions. We also report a dependence of CO sputtering yield on incident angle for MeV He ions which varies as (cosθ)-1.6, in qualitative support of the multiple ion picture. In addition to ejection of the principal molecular species of a solid film, electronic excitation of molecular solids even at very low temperatures leads to formation of new molecular species by bond disruption and fragment rearrangement. In the case of D2O the dominant new molecules are D2 and O2 whose ejection from the film is strongly thermally activated.
Work at University of Virginia was supported in part by NSF Grants AST-82-00477 and DMR-82-11555.

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