Physics – Optics
Scientific paper
2008-04-18
H.-T. Chen et al., Opt. Express 16, 7641-7648 (2008)
Physics
Optics
8 pages, 4 figures, submitted to Optics Express
Scientific paper
10.1364/OE.16.007641
We describe the electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays fabricated on doped semiconductor substrates. The hybrid metal-semiconductor forms a Schottky diode structure, where the active depletion region modifies the substrate conductivity in real-time by applying an external voltage bias. This enables effective control of the resonance enhanced terahertz transmission. Our proof of principle device achieves an intensity modulation depth of 52% by changing the voltage bias between 0 and 16 volts. Further optimization may result in improvement of device performance and practical applications. This approach can be also translated to the other optical frequency ranges.
Averitt Richard D.
Azad Abul K.
Chen Hou-Tong
Gossard Arthur. C.
Lu Hong
No associations
LandOfFree
Electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-303816