Electron impact excitation of forbidden transitions in SI IX

Details Electron impact excitation of forbidden transitions in SI IX Electron impact excitation of forbidden transitions in SI IX

Jan 1983

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1983jphb...16..107a&link_type=abstract

Journal of Physics B - Atomic and Molecular Physics, vol. 16, Jan. 14, 1983, p. 107-120. Research supported by the Science and E

Physics

14

Atomic Excitations, Collision Parameters, Electron Impact, Electron Oscillations, Forbidden Transitions, Silicon, Solar Spectra, Atomic Collisions, Atomic Energy Levels, Atomic Spectra, Configuration Interaction, Electron Energy, Electron Orbitals, Hartree Approximation, Wave Functions

Scientific paper

The excitation thresholds and oscillator strengths for the twelve lowest states of Si IX have been calculated using configuration interaction wavefunctions. The length and velocity values of the oscillator strengths agree closely with each other, and the agreement between calculated and experimentally observed excitation thresholds is better than 3%. These wavefunctions have been used in the R-matrix program to calculate the collision strengths below 10 Ryd for electron impact excitation of 52 forbidden transitions among the states having configurations 1s2 2s2 2p2, 1s2 2s 2p3, and 1s2 2p4. The collision strengths exhibit a complex pattern of resonances in the entire energy range for almost all the transitions. These are averaged over a Maxwellian distribution of electron energies in a wide temperature range of 5000-250,000 K suitable for astrophysical applications. These are the first reported results in the literature for these transitions and are believed to be accurate to within 10% below 100,000 K.

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