Electron-electron interaction in high-quality epitaxial graphene

Details Electron-electron interaction in high-quality epitaxial graphene Electron-electron interaction in high-quality epitaxial graphene

Nov 2011

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2011njph...13k3005p&link_type=abstract

New Journal of Physics, Volume 13, Issue 11, pp. 113005 (2011).

Physics

Scientific paper

Weak localization is studied in two high-quality epitaxial graphene samples grown on silicon-faced 6H-SiC substrates. Following the methodology of Kozikov et al (2010 Phys. Rev. B 82 075424), we measured the temperature dependence of carrier conductivity at zero and low magnetic (B) fields. In both samples, a logarithmic temperature dependence of the carrier conductivity was observed at B = 0 and its amplitude was larger than predicted by a single-particle model, suggesting that electron-electron interaction plays an important role in electron transport in epitaxial graphene films.

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