Electron-based crystalline undulator

Details Electron-based crystalline undulator Electron-based crystalline undulator

2007-01-30

arxiv.org/abs/physics/0701342v1

J.Phys.G34:1581-1594,2007

Physics

Accelerator Physics

16 pages, 8 figures, Latex, IOP style

Scientific paper

10.1088/0954-3899/34/7/001

We discuss the features of a crystalline undulator of the novel type based on the effect of a planar channeling of ultra-relativistic electrons in a periodically bent crystals. It is demonstrated that an electron-based undulator is feasible in the tens of GeV range of the beam energies, which is noticeably higher than the energy interval allowed in a positron-based undulator. Numerical analysis of the main parameters of the undulator as well as the characteristics of the emitted undulator radiation is carried out for 20 and 50 GeV electrons channeling in diamond and silicon crystals along the (111) crystallographic planes.

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