Electrical properties of MIS-photodetectors in base of MBE graded-band HgCdTe

Details Electrical properties of MIS-photodetectors in base of MBE graded-band HgCdTe Electrical properties of MIS-photodetectors in base of MBE graded-band HgCdTe

Sep 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5957..248v&link_type=abstract

Integrated Optics: Theory and Applications. Edited by Pustelny, Tadeusz; Lambeck, Paul V.; Gorecki, Christophe. Proceedings of

Physics

Optics

Scientific paper

The electro-physical and photo-electrical properties of the HgCdTe/SiO2/Si3N4 and HgCdTe/anodic-oxide film MIS structures is experimentally studied. The heteroepitaxial graded-band films Hg0.78Cd0.22Te were produced on the GaAs substrates by molecular-beam epitaxy. It was established of features of electrical properties were related with conduction type of the semiconductor and to the presence of near-surface graded-band layers. The test measurements of the electro-physical and photoelectric performances of MIS-structures in base of graded-band HgCdTe are held and the following parameters are found: resistances of volume, voltage of flat bands, densities of mobile and fixed charges, spectrums of surface states. It is shown that low-temperature double insulator SiO2/Si3N4 is perspective for passivation of surface of focal plane arrays in base of HgCdTe-photodiodes.

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