Physics
Scientific paper
Jun 1999
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999jap....85.8287p&link_type=abstract
Journal of Applied Physics, Volume 85, Issue 12, pp. 8287-8291 (1999).
Physics
4
Ii-Vi Semiconductors, Ii-Vi Semiconductors, Noise Processes And Phenomena, Photoconduction And Photovoltaic Effects, Ii-Vi Semiconductors, Bolometers, Infrared, Submillimeter Wave, Microwave, And Radiowave Receivers And Detectors, Photodetectors, Charge Carriers: Generation, Recombination, Lifetime, Trapping, Mean Free Paths, Point Defects And Defect Clusters, Impurity And Defect Levels, Energy States Of Adsorbed Species
Scientific paper
Measurements are described of I-V characteristics, resistance versus T-1, noise spectra and photoresponse for frequencies of 10 Hz-1 MHz in the temperature range 300-50 K for cadmium-mercury telluride long-wavelength infrared detectors having 12μ epitaxial layers on wide band gap material. The noise consists of 1/f noise and one or two Lorentzians, attributed to shallow hole traps, probably associated with Hg vacancies. The results are discussed and analyzed after a brief resume of generation-recombination noise. The photoinduced current transient spectroscopy response curves are attributed to tunneling to interface states.
Mergui Sylvia
Paul Nichols
Van Vliet Carolyne M.
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