Electrical detection of spin echoes for phosphorus donors in silicon

Details Electrical detection of spin echoes for phosphorus donors in silicon Electrical detection of spin echoes for phosphorus donors in silicon

2007-12-02

arxiv.org/abs/0712.0141v1

Phys. Rev. Lett. 100, 177602 (2008)

Physics

Quantum Physics

14 pages, 3 figures

Scientific paper

10.1103/PhysRevLett.100.177602

The electrical detection of spin echoes via echo tomography is used to observe decoherence processes associated with the electrical readout of the spin state of phosphorus donor electrons in silicon near a SiO$_2$ interface. Using the Carr-Purcell pulse sequence, an echo decay with a time constant of $1.7\pm0.2 \rm{\mu s}$ is observed, in good agreement with theoretical modeling of the interaction between donors and paramagnetic interface states. Electrical spin echo tomography thus can be used to study the spin dynamics in realistic spin qubit devices for quantum information processing.

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