Electrical activity and migration of 90° partial dislocations in SiC

Details Electrical activity and migration of 90° partial dislocations in SiC Electrical activity and migration of 90° partial dislocations in SiC

Jan 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007njph....9....6s&link_type=abstract

New Journal of Physics, Volume 9, Issue 1, pp. 6 (2007).

Physics

2

Scientific paper

SiC p-i-n diodes exhibit an increase in the voltage drop under forward bias which has been linked with the increased mobility of partial dislocations. Through first-principles calculations, we investigated the Si(g) and C(g) core 90° partials in 4H-SiC. We showed that both dislocations can sustain the asymmetric and symmetric reconstructions along the dislocation line. The latter reconstructions are always electrically active with a half-filled metallic band and are always more likely to migrate with substantially lower activation energies. Further we have suggested that under forward bias, the 90° partials are less mobile than the 30° partial dislocations.

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