Physics
Scientific paper
Jan 2005
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5633..585s&link_type=abstract
Advanced Materials and Devices for Sensing and Imaging II. Edited by Wang, Anbo; Zhang, Yimo; Ishii, Yukihiro. Proceedings of
Physics
Scientific paper
Experiments of a lateral semi-insulating GaAs photoconductive switch, both linear and nonlinear mode of the switch were observed when the switch was triggered by 1064 nm laser pulses, with energy of 1.9 mJ and the pulse width of 60 ns, and operated at biased electric field of 4.37 kV/cm. It"s wavelength is longer than 876nm, but the experiments indicate that the semi-insulating GaAs photoconductive switches can absorb 1064 nm laser obviously, which is out of the absorption range of the GaAs material. It is not possible to explain this behavior by using intrinsic absorption mechanism. We think that there are two mostly kinds of absorption mechanisms play a key part in absorption process, they are the two-steps-single-photon absorption that based on the EL2 energy level and two-photon absorption.
Ji Weili
Niu Hongjian
Shi Wei
Wang Wei
Zhang Xianbin
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