Effects of Ga+ milling on InGaAsP Quantum Well Laser with mirrors etched by Focused Ion Beam

Details Effects of Ga+ milling on InGaAsP Quantum Well Laser with mirrors etched by Focused Ion Beam Effects of Ga+ milling on InGaAsP Quantum Well Laser with mirrors etched by Focused Ion Beam

2009-04-06

arxiv.org/abs/0904.0964v1

Physics

Optics

12 pages, 4 figures

Scientific paper

InGaAsP/InP quantum wells (QW) ridge waveguide lasers were fabricated for the evaluation of Ga+ Focused Ion Beam (FIB) milling of mirrors. Electrical and optical proprieties were investigated. A 7% increment in threshold current, a 17% reduction in external quantum efficiency and 15 nm blue shift in the emission spectrum were observed after milling as compared to the as cleaved facet result. Annealing in inert atmosphere partially revert these effects resulting in 4% increment in threshold current, 11% reduction in external efficiency and 13 nm blue shift with the as cleaved result. The current-voltage behavior after milling and annealing shows a very small increase in leakage current indicating that optical damage is the main effect of the milling process.

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