Effects of annealing on the electrical properties of Cd/x/Hg/1-x/Te

Details Effects of annealing on the electrical properties of Cd/x/Hg/1-x/Te Effects of annealing on the electrical properties of Cd/x/Hg/1-x/Te

Dec 1982

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1982jap....53.9080j&link_type=abstract

Journal of Applied Physics, vol. 53, Dec. 1982, p. 9080-9092. Research supported by the Ministry of Defence (Procurement Executi

Physics

46

Annealing, Crystal Growth, Electrical Properties, Mercury Cadmium Tellurides, Semiconductors (Materials), Carrier Mobility, Interstitials, N-Type Semiconductors, P-Type Semiconductors, Temperature Effects, Vapor Pressure

Scientific paper

Closed tube and open tube methods are used to anneal Cd(x)Hg(1-x)Te, where x is in the 0.17-0.31 range and mercury vapor pressure during anneal is controlled by a mercury reservoir held at a temperature that is either the same as this compound's isothermal anneal or its two-temperature anneal. Isothermal anneals conducted in both open and closed tube systems convert material which is initially p type by virtue of native defects to p type, while the two-temperature closed tube anneals may be used to convert n type to p type. In this case, the acceptor concentration is controlled by both temperature and mercury vapor pressure. Two-temperature open tube anneals are also found to yield n to p conversion, with mercury vapor pressure exerting no influence on the final acceptor concentration but affecting the time required to reach equilibrium. Results are discussed in terms of the pressure-temperature diagram and defect/impurity balance of this substance.

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