Effect of reversal of double-implantation schedule of boron in mercury cadmium telluride

Details Effect of reversal of double-implantation schedule of boron in mercury cadmium telluride Effect of reversal of double-implantation schedule of boron in mercury cadmium telluride

Feb 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1523..152k&link_type=abstract

Proc. SPIE Vol. 1523, p. 152-157, Conf on Physics and Technology of Semiconductor Devices and Integrated Circuits, V. Krishnan;

Physics

Scientific paper

Radiation damage due to B+ ion implantation in p-type HgCdTe has been found to create Hg interstitials giving rise to n-type conversion. The implantation energies were kept at 50 and 100 keV with a dose of 1 X 1013 cm-2 each. The effect of implantation with ascending and descending orders of energies were found to be quite different from each other. Radiation enhanced diffusion is thought to be responsible for this anomaly.

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