Effect of dislocations on minority carrier lifetime in HgCdTe

Details Effect of dislocations on minority carrier lifetime in HgCdTe Effect of dislocations on minority carrier lifetime in HgCdTe

Mar 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004jap....95.2467g&link_type=abstract

Journal of Applied Physics, Volume 95, Issue 5, pp. 2467-2472 (2004).

Physics

4

Charge Carriers: Generation, Recombination, Lifetime, And Trapping, Theories And Models Of Crystal Defects, Iii-V And Ii-Vi Semiconductors

Scientific paper

This article shows that the temperature dependence of minority carrier lifetime in mercury cadmium telluride samples of differing dislocation densities can be accounted well by including the dislocation contribution in addition to the contribution of well known radiative, auger, and Shockley-Read recombination mechanisms. The dislocation contribution to the minority carrier lifetime has been calculated on the basis of a recently proposed model [V. Gopal and S. Gupta, IEEE-ED 50, 1220 (2003)] by treating dislocation as a discontinuity of the lattice.

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