Physics
Scientific paper
Dec 2009
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2009njph...11l5012a&link_type=abstract
New Journal of Physics, Volume 11, Issue 12, pp. 125012 (2009).
Physics
2
Scientific paper
Semiconductor heterostructures are the basic materials underlying optoelectronic devices, particularly lasers and light-emitting diodes (LEDs). Made from various III-V-, II-VI-, SiGe- and other compound semiconductors, modern semiconductor devices are available for the generation, detection and modulation of light covering the entire ultra-violet to far-infrared spectral region. Recent approaches that introduced multilayer heterostructures tailored on the lower nanometre scale made possible artificial semiconductors with new properties, such as extended wavelength coverage, that enabled new applications. Together with ongoing progress on wide-gap semiconductors, the optical wavelengths accessible by semiconductor devices are steadily expanding towards the short-wavelength ultra-violet regime, as well as further into the far-infrared and terahertz spectral regions. It is the aim of this focus issue to present cutting-edge research topics on the most recent optoelectronic material and device developments in this field using advanced semiconductor heterostructures.
Focus on Advanced Semiconductor Heterostructures for Optoelectronics Contents
Theoretical and experimental investigations of the limits to the maximum output power of laser diodes H Wenzel, P Crump, A Pietrzak, X Wang, G Erbert and G Tränkle
GaN/AlGaN intersubband optoelectronic devices H Machhadani, P Kandaswamy, S Sakr, A Vardi, A Wirtmüller, L Nevou, F Guillot, G Pozzovivo, M Tchernycheva, A Lupu, L Vivien, P Crozat, E Warde, C Bougerol, S Schacham, G Strasser, G Bahir, E Monroy and F H Julien
Bound-to-continuum terahertz quantum cascade laser with a single-quantum-well phonon extraction/injection stage Maria I Amanti, Giacomo Scalari, Romain Terazzi, Milan Fischer, Mattias Beck, Jérôme Faist, Alok Rudra, Pascal Gallo and Eli Kapon
Structural and optical characteristics of GaN/ZnO coaxial nanotube heterostructure arrays for light-emitting device applications Young Joon Hong, Jong-Myeong Jeon, Miyoung Kim, Seong-Ran Jeon, Kyung Ho Park and Gyu-Chul Yi
Zinc oxide nanorod-based heterostructures on solid and soft substrates for white-light-emitting diode applications M Willander, O Nur, N Bano and K Sultana
High-power disk lasers based on dilute nitride heterostructures M Guina, T Leinonen, A Härkönenn and M Pessa
Deformed microcavity quantum cascade lasers with directional emission Qi Jie Wang, Changling Yan, Laurent Diehl, Martina Hentschel, Jan Wiersig, Nanfang Yu, Christian Pflügl, Mikhail A Belkin, Tadataka Edamura, Masamichi Yamanishi, Hirofumi Kan and Federico Capasso
High power quantum cascade lasers Manijeh Razeghi, Steven Slivken, Yanbo Bai, Burc Gokden and Shaban Ramezani Darvish
Hybrid silicon lasers for optical interconnects Daoxin Dai, Alexander Fang and John E Bowers
Mid-infrared interband cascade lasers operating at ambient temperatures I Vurgaftman, C L Canedy, C S Kim, M Kim, W W Bewley, J R Lindle, J Abell and J R Meyer
Single-mode electrically pumped GaSb-based VCSELs emitting continuous-wave at 2.4 and 2.6 μm Alexander Bachmann, Shamsul Arafin and Kaveh Kashani-Shirazi
AlGaN-based laser diodes for the short-wavelength ultraviolet region Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Yasufumi Takagi, Kazuya Uchiyama and Hirofumi Kan
Amann Markus C.
Capasso Federico
Larsson Anders
Pessa Markus
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