Dynamics of solid thin-film dewetting in the silicon-on-insulator system

Details Dynamics of solid thin-film dewetting in the silicon-on-insulator system Dynamics of solid thin-film dewetting in the silicon-on-insulator system

Apr 2011

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2011njph...13d3017b&link_type=abstract

New Journal of Physics, Volume 13, Issue 4, pp. 043017 (2011).

Physics

3

Scientific paper

Using low-energy electron microscopy movies, we have measured the dewetting dynamics of single-crystal Si(001) thin films on SiO2 substrates. During annealing (T>700 °C), voids open in the Si, exposing the oxide. The voids grow, evolving Si fingers that subsequently break apart into self-organized three-dimensional (3D) Si nanocrystals. A kinetic Monte Carlo model incorporating surface and interfacial free energies reproduces all the salient features of the morphological evolution. The dewetting dynamics is described using an analytic surface-diffusion-based model. We demonstrate quantitatively that Si dewetting from SiO2 is mediated by surface-diffusion driven by surface free-energy minimization.

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