Doping effects in AlGaAs lasers with separate confinement heterostructures (SCH). Modeling optical and electrical characteristics with Sentaurus TCAD

Physics – Computational Physics

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Scientific paper

Optical and electrical characteristics of AlGaAs lasers with separate confinement heterostructures are modeled by using Synopsys's Sentaurus TCAD and open source software for semi-automatic data analysis of large collections of data. The effects of doping in all laser layers are investigated with the aim to achieve optimal characteristics of the devise. The results are compared with these obtained for real lasers produced at Polyus research institute in Moscow, showing that a significant improvement can be achieved, in particular an increase in optical efficiency (up to over 70 %) by careful control of type and level of doping through out the entire structure.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

Doping effects in AlGaAs lasers with separate confinement heterostructures (SCH). Modeling optical and electrical characteristics with Sentaurus TCAD does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Doping effects in AlGaAs lasers with separate confinement heterostructures (SCH). Modeling optical and electrical characteristics with Sentaurus TCAD, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Doping effects in AlGaAs lasers with separate confinement heterostructures (SCH). Modeling optical and electrical characteristics with Sentaurus TCAD will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-429815

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.