Donor-like localization and activated conduction in compensated n-Hg0.8Cd0.2Te

Details Donor-like localization and activated conduction in compensated n-Hg0.8Cd0.2Te Donor-like localization and activated conduction in compensated n-Hg0.8Cd0.2Te

Jul 1989

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989jemat..18..537y&link_type=abstract

Journal of Electronic Materials, Volume 18, Issue 4, pp.537-541

Computer Science

2

Scientific paper

We report first results on the activated resistivity in n- type Hg0.8Cd0.2Te crystals heavily compensated through native acceptor defects (double acceptor mercury vacancies). Three activation energies are reported, all of which increase with increasing compensation. In conjunction with the variation of Hall coefficient and Hall mobility with temperature we conclude, i) formation of (donor+-acceptor-) pairs during stoichiometric annealing, ii) distortion of second acceptor states of the paired mercury vacancies to raise them near, or in the conduction band, and iii) the pair states, when occupied with electrons in the presence of excess unpaired donors, behave like localized donors, and when unoccupied, like electron traps and/or recombination centres.

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