Physics
Scientific paper
Sep 1995
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995spie.2554...25d&link_type=abstract
Proc. SPIE Vol. 2554, p. 25-34, Growth and Characterization of Materials for Infrared Detectors II, Randolph E. Longshore; Jan W
Physics
1
Scientific paper
Molecular-beam epitaxy (MBE) has been utilized to deposit single crystal epitaxial films of CdTe(112)B and HgCdTe(112)B directly onto Si(112) substrates without the use of GaAs interfacial layers. The films have been characterized with x-ray diffraction and wet chemical defect etching, and IR detectors have been fabricated and tested. CdTe(112)B films are twin- free and have x-ray rocking curves as narrow as 72 arc-seconds and near-surface etch pit density (EPD) of 2 X 10(superscript 6) cm(superscript -2) for 8 micrometers -thick films. HgCdTe(112)B films deposited on Si substrates have x-ray rocking curve FWHM as low as 92 arc-seconds and EPD of 8 - 30 X 10(superscript 6) cm(superscript -2). HgCdTe/Si infrared detectors have been fabricated with R(subscript 0)A equals 4.3 X 10(superscript 3) (Omega) -cm(superscript 2) (f/2 FOV) and 7.8 micrometers cutoff wavelength at 78 K to demonstrate the capability of MBE for growth of large-area HgCdTe arrays on Si.
Cockrum Charles A.
de Lyon Terry J.
Johnson Scott M.
Rajavel Rajesh D.
Venzor Gregory M.
No associations
LandOfFree
Direct MBE growth of HgCdTe(112) IR detector structures on Si(112) substrates does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Direct MBE growth of HgCdTe(112) IR detector structures on Si(112) substrates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Direct MBE growth of HgCdTe(112) IR detector structures on Si(112) substrates will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-991378