Physics
Scientific paper
Sep 2009
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2009njph...11i3019p&link_type=abstract
New Journal of Physics, Volume 11, Issue 9, pp. 093019 (2009).
Physics
Scientific paper
The role of an ultrathin Cu layer on the nucleation and growth of Fe/Si nanostructures on Si(111) is investigated using scanning tunneling microscopy. While for deposition on the bare Si(111)-7×7 surface, the diffusion and nucleation of Fe atoms are significantly influenced by the reaction with the Si substrate, the Si(111)-'5×5'-Cu surface causes a decoupling of the diffusion and nucleation on and reaction with the surface. For moderate temperatures (T<=350 °C), this decoupling results in a diffusion behaviour, which can be adequately described by the conventional nucleation theory (CNT), using a single value for the effective diffusion barrier E*=0.49 eV and a critical nucleus size i=2. Furthermore, it is evidenced that only Fe atoms contribute to the critical nucleus and E* thus describes the diffusion and nucleation of Fe atoms. On the other hand, at temperatures above 400 °C, the island growth kinetics change considerably, i.e. the preferential step edge nucleation and three-dimensional growth are observed, and CNT is no longer applicable.
Paredis K.
Smeets D.
Vantomme A.
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