Development of a Low Noise Optoelectronic Integrated Readout with N-I A-SI:H Photodiode Array for Positron Emission Tomography

Physics – Medical Physics

Scientific paper

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Scientific paper

Detection of scintillation light from LSO crystals used in Positron Emission Tomography is traditionally based on photo multipliers. The proposal is to develop a novel photo sensor, which is based on vertically integrating an hydrogenated amorphous silicon (a-Si:H) film on a pixel readout chip. The a-Si:H film is deposited with a n-i-p diode structure. Section 1 compares different circuit topologies, at the transistor level, in order to fulfill the noise requirement for the circuit. Quantum Efficiency results of a-Si:H photodiodes deposited on glass and on integrated circuits are reported in section 2.

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