Design of a Monolithic Active Pixel Sensor in ST 0.13UM Technology

Physics – Medical Physics

Scientific paper

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Scientific paper

This paper presents the architecture of a new Monolithic Active Pixel Sensor chip designed in ST Microelectronics 0.13um CMOS technology at the Roma Tre University INFN Section. The two goals of the chip are: technology characterization and test of data sparsification architecture, implemented to fulfil requirements of the future high energy physics experiments. In the intended applications the commonly used 'off-line' and 'off-chip' signal processing is not possible due to a huge bandwidth needed to read out all pixels at a satisfactory speed. The authors propose a new approach for the on-line data sparsification which consists in implementation of the full on-pixel signal processing. The difficulties that had to be overcame are: limited on-pixel silicon area for fitting all the necessary electronic circuitry, forced use of only NMOS transistors in the sensing area, current and threshold mismatch typical for CMOS submicron technologies. Finally special care had to be taken to avoid crosstalk from digital to analog signals.

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