Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors

Details Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors

2006-05-08

arxiv.org/abs/physics/0605073v1

Physics

Instrumentation and Detectors

Presented at CLEO QELS, Long Beach, California (May 2006)

Scientific paper

This paper demonstrates the performance of planar geometry InGaAs/InP
avalanche diodes, specifically designed and fabricated for Geiger-mode
operation at wavelengths around 1550nm, in terms of dark count rate,
single-photon detection efficiency, afterpulsing and photon-timing jitter.

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