Physics – High Energy Physics – High Energy Physics - Experiment
Scientific paper
2002-12-11
Nucl.Instrum.Meth. A505 (2003) 663-682
Physics
High Energy Physics
High Energy Physics - Experiment
33 pages, 25 figures, 3 tables, accepted for publication in NIM A
Scientific paper
10.1016/S0168-9002(03)00618-1
To fully exploit the HERA-II upgrade,the ZEUS experiment has installed a Micro Vertex Detector (MVD) using n-type, single-sided, silicon micro-strip sensors with capacitive charge division. The sensors have a readout pitch of 120 micrometers, with five intermediate strips (20 micrometer strip pitch). The designs of the silicon sensors and of the test structures used to verify the technological parameters, are presented. Results on the electrical measurements are discussed. A total of 1123 sensors with three different geometries have been produced by Hamamatsu Photonics K.K. Irradiation tests with reactor neutrons and Co-60 photons have been performed for a small sample of sensors. The results on neutron irradiation (with a fluence of 1 x 10^{13} 1 MeV equivalent neutrons / cm^2) are well described by empirical formulae for bulk damage. The Co-60 photons (with doses up to 2.9 kGy) show the presence of generation currents in the SiO_2-Si interface, a large shift of the flatband voltage and a decrease of the hole mobility.
Carlin R.
Coldewey C.
Dannheim Dominik
Fretwurst Eckhart
Garfagnini Alberto
No associations
LandOfFree
Design and Tests of the Silicon Sensors for the ZEUS Micro Vertex Detector does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Design and Tests of the Silicon Sensors for the ZEUS Micro Vertex Detector, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Design and Tests of the Silicon Sensors for the ZEUS Micro Vertex Detector will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-637991