Design and Performance of an InGaAs-InP Single-Photon Avalanche Diode Detector

Details Design and Performance of an InGaAs-InP Single-Photon Avalanche Diode Detector Design and Performance of an InGaAs-InP Single-Photon Avalanche Diode Detector

2006-05-03

arxiv.org/abs/quant-ph/0605042v1

IEEE Journal of Quantum Electronics, Volume 42 (4), pp397-403 (2006)

Physics

Quantum Physics

Scientific paper

10.1109/JQE.2006.871067

This paper describes the design, fabrication, and performance of
planar-geometry InGaAs-InP devices which were specifically developed for
single-photon detection at a wavelength of 1550 nm. General performance issues
such as dark count rate, single-photon detection efficiency, afterpulsing, and
jitter are described.

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