Description of the plasma delay effect in silicon detectors

Details Description of the plasma delay effect in silicon detectors Description of the plasma delay effect in silicon detectors

2012-01-10

arxiv.org/abs/1201.2188v1

Physics

Nuclear Physics

Nuclear Theory

8 figures

Scientific paper

A new method of modeling of the current signal induced by charged particle in silicon detectors is presented. The approach is based on the Ramo-Shockley theorem for which the charge carrier velocities are determined by taking into account not only the external electric field generated by the electrodes, but also the Coulomb interaction between the electron and hole clouds as well as their diffusion.

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