Deposition of High-Quality a-Si:H by Suppressing Growth of a-Si Clusters in SiH4 Plasmas

Details Deposition of High-Quality a-Si:H by Suppressing Growth of a-Si Clusters in SiH4 Plasmas Deposition of High-Quality a-Si:H by Suppressing Growth of a-Si Clusters in SiH4 Plasmas

Oct 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005aipc..799..105w&link_type=abstract

NEW VISTAS IN DUSTY PLASMAS: Fourth International Conference on the Physics of Dusty Plasmas. AIP Conference Proceedings, Volum

Physics

Plasma Cvd, Dusty Plasmas, Silicon, Particle Size, Thin Films, Plasma-Based Ion Implantation And Deposition, Chemical Vapor Deposition, Dusty Or Complex Plasmas, Plasma Crystals

Scientific paper

The density of Si-particles in a small size range below 10nm (referred to as clusters) in SiH4 capacitively-coupled high-frequency discharges amounts to 1011cm-3 even under deposition conditions of device-quality a-Si:H films. The results reported until now regarding the growth of such clusters are shown to be reasonably understood by taking into account the effects of gas flow on the growth. The Si-H2 bond formation in the a-Si films are found to be mainly contributed by incorporation of large clusters (clusters in a range above about 0.5 nm in size) rather than higher-order-silane (HOS) radicals [SinHx (n<5, x<2n+2)] in the plasma. By employing the cluster-suppressed plasma CVD reactors, the remarkable decrease in Si-H2 bond density in the films is realized, leading to the deposition of a-Si:H films of less light-induced degradation. Based on the knowledge of cluster growth obtained until now, the reactor with a potentiality of high rate deposition of high-quality films is proposed and its preliminary results are presented.

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