DEPFET—detectors: New developments

Details DEPFET—detectors: New developments DEPFET—detectors: New developments

Mar 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007nimpa.572..311l&link_type=abstract

Nuclear Instruments and Methods in Physics Research Section A, Volume 572, Issue 1, p. 311-315.

Physics

3

X- And Gamma-Ray Sources, Mirrors, Gratings, And Detectors, Spaceborne And Space Research Instruments, Apparatus, And Components, Solid-State Detectors, Field Effect Devices, X- And Gamma-Ray Telescopes And Instrumentation

Scientific paper

The Depleted Field Effect Transistor (DEPFET) detector amplifier structure forms the basis of a variety of detectors being developed at the MPI semiconductor laboratory. These detectors are foreseen to be used in astronomy and particle physics as well as other fields of science. The detector developments are described together with some intended applications. They comprise the X-ray astronomy missions XEUS and SIMBOL-X as well as the vertex detector of the planned International Linear Collider (ILC). All detectors are produced in the MPI semiconductor laboratory that has a complete silicon technology available.

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