Dependence of Fermi level of Hg0.8Cd0.2Te on impurity concentration and temperature

Details Dependence of Fermi level of Hg0.8Cd0.2Te on impurity concentration and temperature Dependence of Fermi level of Hg0.8Cd0.2Te on impurity concentration and temperature

Sep 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1685..276w&link_type=abstract

Proc. SPIE Vol. 1685, p. 276-284, Infrared Detectors and Focal Plane Arrays II, Eustace L. Dereniak; Robert E. Sampson; Eds.

Physics

Scientific paper

The relationship between the Fermi level of MCT and the impurity concentration and temperature was calculated while considering the special characteristics of nonparabolic bands of MCT material. And then an imitative formula which coincides very well with the values of log-log plot of N(subscript DA) versus T(m(subscript c)/m(subscript o)). The curves for constant reduced Fermi level as partially straight lines only have been obtained.

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