Dependence of far-field characteristics on the number of lasing modes in stadium-shaped InGaAsP microlasers

Details Dependence of far-field characteristics on the number of lasing modes in stadium-shaped InGaAsP microlasers Dependence of far-field characteristics on the number of lasing modes in stadium-shaped InGaAsP microlasers

2008-03-03

arxiv.org/abs/0803.0177v2

Optics Express Vol.16, pp.17554-17559 (2008)

Physics

Optics

7 pages, 3 figures

Scientific paper

10.1364/OE.16.017554

We study spectral and far-field characteristics of lasing emission from
stadium-shaped semiconductor (InGaAsP) microlasers. We demonstrate that the
correspondence between a lasing far-field emission pattern and the result of a
ray simulation becomes better as the number of lasing modes increases. This
phenomenon is reproduced in the wave calculation of the cavity modes.

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