Demonstration of InAsSb/AlInSb double-heterostructure detectors for room temperature operation in the 5- to 8-um wavelength range

Details Demonstration of InAsSb/AlInSb double-heterostructure detectors for room temperature operation in the 5- to 8-um wavelength range Demonstration of InAsSb/AlInSb double-heterostructure detectors for room temperature operation in the 5- to 8-um wavelength range

Apr 1999

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999spie.3629..357w&link_type=abstract

Proc. SPIE Vol. 3629, p. 357-363, Photodetectors: Materials and Devices IV, Gail J. Brown; Manijeh Razeghi; Eds.

Physics

Scientific paper

We report the first demonstration of InAsSb/AlInSb double heterostructure detectors for room temperature operation. The structures were grown in a solid source molecular beam epitaxy reactor on semi-insulating GaAs substrate. The material was processed to 400 X 400 micrometer mesas using standard photolithography, etching, and metallization techniques. No optical immersion or surface passivation was used. The photovoltaic detectors showed a cutoff wavelength at 8 micrometer at 300 K. The devices showed a high quantum efficiency of 40% at 7 micrometer at room temperature. A responsivity of 300 mA/W was measured at 7 micrometer under a reverse bias of 0.25 V at 300 K resulting in a Johnson noise limited detectivity of 2 X 10(superscript 8) cmHz(superscript 1/2)/W.

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