Demonstration of a mid infrared silicon Raman amplifier

Details Demonstration of a mid infrared silicon Raman amplifier Demonstration of a mid infrared silicon Raman amplifier

2007-08-11

arxiv.org/abs/0708.1552v1

Physics

Optics

8 pages, 5 figures

Scientific paper

10.1364/OE.15.014355

We demonstrate for the first time a mid infrared silicon Raman amplifier. Amplification of 12 dB is reported for a signal at 3.39 micron wavelength. The active medium was a 2.5 cm long silicon sample that was pumped with 5ns pulses at 2.88 micron. The absence of the nonlinear losses which severely limit the performance of silicon Raman devices in the near infrared combined with unsurpassed crystal quality, high thermal conductivity render silicon a very attractive Raman medium. Such a technology can potentially extend silicon photonics application beyond data communication in the near infrared and into the mid infrared world of remote sensing, biochemical detection and laser medicine.

Affiliated with

Also associated with

No associations

Rating

Demonstration of a mid infrared silicon Raman amplifier does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Demonstration of a mid infrared silicon Raman amplifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Demonstration of a mid infrared silicon Raman amplifier will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-213542