Physics
Scientific paper
Dec 2009
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2009pepi..177..122a&link_type=abstract
Physics of the Earth and Planetary Interiors, Volume 177, Issue 3-4, p. 122-129.
Physics
3
Scientific paper
Steady-state deformation experiments were carried out in a deformation-DIA (D-DIA) high-pressure apparatus on oriented diopside single crystals, at pressure (P) ranging from 3.8 to 8.8 GPa, temperature (T) from 1100 to 1400 °C, and differential stress (σ) between 0.2 and 1.7 GPa. Three compression directions were chosen in order to test the activity of diopside dislocation slip systems, i.e., ½<1 1 0>{11¯0} systems activated together, both [1 0 0](0 1 0) and [0 1 0](1 0 0) systems together, or [0 0 1] dislocation slip activated in (1 0 0), (0 1 0) and {1 1 0} planes. Constant applied stress and specimen strain rates (ɛ˙) were monitored in situ using time-resolved synchrotron X-ray diffraction and radiography, respectively. Transmission electron microscopy (TEM) investigation of the run products revealed that dislocation creep was responsible for sample deformation. Comparison of the present high-P data with those obtained at room-P by Raterron and Jaoul (1991) - on similar crystals deformed at comparable T-σ conditions - allows quantifying the effect of P on ½<1 1 0>{11¯0} activity. This translates into the activation volume V* = 17 ± 6 cm3/mol in the corresponding creep power law. Our data also show that both ½<1 1 0> dislocation slips and [0 0 1] have comparable slip activities at mantle P and T, while [1 0 0](0 1 0) and [0 1 0](1 0 0) slip systems remain marginal. These results show that P has a significant effect on high-T dislocation creep in diopside, the higher the pressure the harder the crystal, and that this effect is stronger on ½<1 1 0> slip than on [0 0 1] slip.
Amiguet Elodie
Chen Jiuhua
Cordier Patrick
Couvy Hélène
Raterron Paul
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