Defect structure and diffusion of defects in narrow-gap Hg1-xCdxTe crystals

Physics

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Scientific paper

Formation and diffusion of native point defects -- mercury vacancies and interstitials -- in Hg1-xCdxTe crystals (x approximately 0.2...0.3) are investigated by optical and galvanomagnetic methods. The reaction constant for the reaction of neutral vacancy formation Hg(L) + VHgx ↔ 0 in Hg-saturated Hg1-xCdxTe crystals is determined in the temperature range 200...600°C. It is equal to 2.44"1023 exp (-1.50 eV/kBT) cm-3 for x = 0.215 and 2.25"1023 exp (-1.57 eV/kBT) cm-3 for x = 0.295. Then defect diagrams for equilibrated mercury vacancies in Hg1-x CdxTe crystals of x = 0.215 and x = 0.295 are calculated. The results of calculations have coincided with the data of experiment. Concentration of equilibrated mercury interstitials HgI" is estimated by studying mercury thermal diffusion in heterogeneous Te-saturated Hg1-xCdxTe crystals of x = 0.215 and x = 0.295. The reaction constant for the interstitial formation reaction Hg(L) → HgI" + 2e' is found for Hg-saturated conditions. It is equal to 6.36"1020 exp (-0.94 eV/kBT)cm-3 for x = 0.215 and 4.97"1020 exp (-1.07 eV/kBT) cm-3 for x = 0.295. Basing on this data the reaction constant KF" for Frenkel's reaction HgI" + VHg" ↔ 0 have been also obtained: KF" = 4.66"1046 exp (-2.26 eV/kBT) cm-6 for x = 0.215 and KF" = 3.82"1045 exp (-2.19 eV/kBT) cm-6 for x = 0.295. Then total concentration of equilibrated mercury vacancies and interstitials in Hg 0.8Cd 0.2Te crystals have been calculated for Hg-saturated and Te-saturated annealing conditions in the temperature range from 0°C up to a melting point.

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