Deep-ultraviolet micro-Raman investigation of surface defects in a 4H-SiC homoepitaxially grown film

Details Deep-ultraviolet micro-Raman investigation of surface defects in a 4H-SiC homoepitaxially grown film Deep-ultraviolet micro-Raman investigation of surface defects in a 4H-SiC homoepitaxially grown film

Dec 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005apphl..87x1906t&link_type=abstract

Applied Physics Letters, Volume 87, Issue 24, id. 241906 (3 pages) (2005).

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2

Defects And Impurities: Doping, Implantation, Distribution, Concentration, Etc., Phonons In Crystal Lattices, Other Nonmetallic Inorganics

Scientific paper

The structures of comet defects in a 4H-SiC homoepitaxially grown film are investigated by deep-ultraviolet micro-Raman spectroscopy. Spatial distribution of the 4H- and 3C-SiC is clearly distinguished both from the intensities of the folded longitudinal acoustic phonon mode and the peak energies of the nonfolded longitudinal optical phonon mode. The mappings of these parameters indicate the existence of two types of comets. The mechanisms of heteropolytypic inclusion in comets are discussed.

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