Deconvoluting TOFSIMS Depth Profiles of Presolar SiC Grains

Details Deconvoluting TOFSIMS Depth Profiles of Presolar SiC Grains Deconvoluting TOFSIMS Depth Profiles of Presolar SiC Grains

Mar 2012

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2012lpi....43.2135h&link_type=abstract

43rd Lunar and Planetary Science Conference, held March 19–23, 2012 at The Woodlands, Texas. LPI Contribution No. 1659, id.2135

Physics

Scientific paper

The sputtering process of presolar grains is simulated to deconvolute
TOFSIMS depth profiles. This helps to determine the interior structure,
which provides clues about the history of the grains like shockwave
implantation of trace elements.

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