Decoherence Rate of Semiconductor Charge Qubit Coupled to Acoustic Phonon Reservoir

Details Decoherence Rate of Semiconductor Charge Qubit Coupled to Acoustic Phonon Reservoir Decoherence Rate of Semiconductor Charge Qubit Coupled to Acoustic Phonon Reservoir

2003-09-01

arxiv.org/abs/quant-ph/0309024v2

Phys. Rev. A 69, 032311 (2004)

Physics

Quantum Physics

4 pages, 2 figures, typos corrected, fig. 2 replaced by the improved version

Scientific paper

10.1103/PhysRevA.69.032311

We analyze decoherence of an electron in a double-dot due to the interaction with acoustic phonons. For large tunneling rates between the quantum dots, the main contribution to decoherence comes from the phonon emission relaxation processes, while for small tunneling rates, the virtual-phonon, dephasing processes dominate. Our results show that in common semiconductors, such as Si and GaAs, the latter mechanism determines the upper limit for the double-dot charge qubit performance measure.

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