Dangling-bond charge qubit on a silicon surface

Details Dangling-bond charge qubit on a silicon surface Dangling-bond charge qubit on a silicon surface

2009-10-09

arxiv.org/abs/0910.1797v2

New Journal of Physics 12(8): 083018 2010

Physics

Quantum Physics

17 pages, 3 EPS figures, 1 table

Scientific paper

10.1088/1367-2630/12/8/083018

Two closely spaced dangling bonds positioned on a silicon surface and sharing an excess electron are revealed to be a strong candidate for a charge qubit. Based on our study of the coherent dynamics of this qubit, its extremely high tunneling rate ~ 10^14 1/s greatly exceeds the expected decoherence rates for a silicon-based system, thereby overcoming a critical obstacle of charge qubit quantum computing. We investigate possible configurations of dangling bond qubits for quantum computing devices. A first-order analysis of coherent dynamics of dangling bonds shows promise in this respect.

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