Current status of InGaAs detector arrays for 1-3 microns

Details Current status of InGaAs detector arrays for 1-3 microns Current status of InGaAs detector arrays for 1-3 microns

Dec 1991

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1991spie.1540..596o&link_type=abstract

In: Infrared technology XVII; Proceedings of the Meeting, San Diego, CA, July 22-26, 1991 (A93-38376 15-35), p. 596-605.

Physics

4

Indium Gallium Arsenides, Infrared Detectors, Linear Arrays, Near Infrared Radiation, Energy Gaps (Solid State), Multiplexing, Reliability, Spatial Resolution

Scientific paper

In(x)Ga(1-x)As detector linear arrays with 256 and 512 elements have been made for the 1.0-1.7 micron spectrum (x = 0.53) and 1.4-2.6 microns (x = 0.8) with 30 x 30, 30 x 100, and 25 x 500 micron pixel sizes. Room temperature D* values beyond 1 x 10 exp 13 W/cm-sq rt Hz (at 1.7 micron) and 1 x 10 exp 11 W/cm-sq rt Hz (at 2.5 microns) are reported. A 128 x 128 element In(0.53)Ga(0.47)As detector array with less than 1 percent dropouts is also described. High reliability is also reported for these arrays. Future improvements needed include lower-noise multiplexers and the use of zero-bias multiplexers.

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