Creation of p-n junction in Hg(0.3)Cd(0.7)Te

Details Creation of p-n junction in Hg(0.3)Cd(0.7)Te Creation of p-n junction in Hg(0.3)Cd(0.7)Te

Dec 1990

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1990apphl..57.2689b&link_type=abstract

Applied Physics Letters (ISSN 0003-6951), vol. 57, Dec. 17, 1990, p. 2689-2691. Research supported by the Alexander von Humboldt

Physics

10

Electron Irradiation, Mercury Cadmium Tellurides, P-N Junctions, Plastic Deformation, Electron Microscopy, Photomicrographs, Substrates

Scientific paper

Local plastic deformation and electron irradiation were used to create p-n junctions in Hg(0.3)Cd(0.7)Te. The electron-induced current mode of scanning electron microscopy was used to detect the local conversion from p type to n type. Control experiments with CdTe and independent results show that the migration of interstitial mercury and its reaction with an acceptor must be responsible for the observed conversion.

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