Control of electron- and phonon-derived thermal conductances in carbon nanotubes

Details Control of electron- and phonon-derived thermal conductances in carbon nanotubes Control of electron- and phonon-derived thermal conductances in carbon nanotubes

Aug 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007njph....9..245y&link_type=abstract

New Journal of Physics, Volume 9, Issue 8, pp. 245 (2007).

Physics

12

Scientific paper

We present a method for controlling the electron- and phonon-derived thermal conductances in carbon nanotubes with vacancy defects involving numerical analysis based on the nonequilibrium electron/phonon Green's function method. The electron-derived thermal conductance can be controlled by tuning the external gate voltage because the resonant backscattering level (dangling σ-bond states around vacancies) can be shifted by the gate voltage. In contrast, thermal annealing is effective in increasing the phonon-derived thermal conductance because the quasi-bound phonon state localized around a vacancy disappears due to the annealing-induced vacancy rearrangement.

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