Construction of Scanning Tunneling Microscope and Analysis of Vicinal SILICON(111) Surfaces with STM (SILICON(111), Vicinal Silicon(iii))

Details Construction of Scanning Tunneling Microscope and Analysis of Vicinal SILICON(111) Surfaces with STM (SILICON(111), Vicinal Silicon(iii)) Construction of Scanning Tunneling Microscope and Analysis of Vicinal SILICON(111) Surfaces with STM (SILICON(111), Vicinal Silicon(iii))

Jan 1990

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1990phdt........51w&link_type=abstract

Thesis (PH.D.)--UNIVERSITY OF MARYLAND COLLEGE PARK, 1990.Source: Dissertation Abstracts International, Volume: 51-11, Section:

Physics

Scientific paper

Scanning Tunneling Microscopy (STM) has become a powerful technique in surface study. In this dissertation, basic theoretical and instrumentational aspects of STM are reviewed; the construction and testing of a UHV STM are described in detail. The structure of vicinal Si(111) surfaces were statistically investigated with this STM system. The surface morphology is strongly affected by the interaction between terrace and step structures. The (7 x 7) reconstruction domains are correlated across steps on thermally equilibrated surfaces. Energetic step repulsive interaction has been observed in addition to the entropic "repulsion" between wandering steps. This energetic repulsion is an important factor causing the ratio of the triple - to single-layer steps to increase with the misorientation angle. The height correlation measurement indicate that the surfaces can be categorized as "rough" surfaces. The Surface structure is also strongly affected by the annealing processes.

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