Construction and performance of a 320 X 244-element IR-CCD imager with PtSi Schottky-barrier detectors

Physics

Scientific paper

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Charge Coupled Devices, Electrical Properties, Infrared Detectors, Infrared Imagery, Platinum Alloys, Schottky Diodes, Capacitance, Charge Transfer, Chips (Electronics), Pixels, Silicides, Transconductance

Scientific paper

A 320 x 244-element IR CCD imager was developed with 40 x 40-micron pixels, 43-percent fill factor, and a saturation signal of 1.4 x 10 to the 6th electrons/pixel. Charge-transfer inefficiency of less that 0.0001 per transfer was achieved for operation of the imager at 77 K with horizontal clock frequency of 6.2 MHz using a 12-micron-wide horizontal output register with a 3-micron-wide trench. The device was operated at temperatures as low as 50 K with sufficiently low transfer losses to produce good quality video images. Excellent quality thermal imaging was demonstrated for operation at 30 frames/sec with a 100-mm f/1.4 lens, an f/1.3 cold shield, and a 3.4-micron long-pass filter at 77 K.

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